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Transistor-diode elements on basis of multiphase oxide materials with metal-insulator transition

Function, field of application

Use of developed elements in bipolar and field transistor diode elements, which realize «metal-insulator transition» effect for electronics.

Electronic component base for new electronic devices of information technologies and telecommunication.

Solid state information tank with high capacity, analog flash drive storage device; diode and transistor structures, analog diode and transistor structures on basis of amorphous silicon and polysilicon.

Description of the project

Variants of workable transistor-diode structures:

240_1.jpg - structure of charge-injection transistor with swing check valve. The channel is controlled due to soft disruption of thin layer of dielectric and avalanche injection of drivers to the channel;

240_2.jpg- structure of charge-injection transistor with p – n interface. The channel is controlled due to injection of drivers to the channel through p – n interface, it decreases turn-on voltage of device;

240_3.jpg- heterostructure p-Si-VO2-Me and its I–V curve. Measuring was carried out by sinusoidal signal with frequency 100 Hz with limiting resistor in circuit- 10 kiloohm. In I-V curve we can see effect of rectification, which is caused by formation of p-n interface in the boundary p-Si – n-VO2.

Competitive advantage

          
  • Electronic control of the channel.
  • Short time of operation (units of picoseconds).
  • Energy efficiency.
  • Compatibility with traditional silicic technology.

Scheme of commercialization

  • Transfer of technology, sale of a licence.
  • For electronic devices of small integration, which use workable electronic components, after search of marketing «niches», creation of manufacture.

Legal protection

  • Patent RF for the invention №2392694 «Method of getting photovoltaic element» dated 20.06.2010.
  • Patent RF for the invention №2468471 «Method of getting nonvolatile memory element » dated 27.11.2012.
  • Patent RF for the invention №2470409 «Method for getting diode on basis of niobium oxide» dated 20.12.2012.
  • The certificate of state registration of programme for computer № 2012618514 «Programme for getting and processing of data of electrophysical measuring «VA researcher1.1»» dated 19.09.2012.

All projects and developments




Petrozavodsk State University
33, Lenin Ave., 185910, Petrozavodsk, Republic of Karelia, Russia
Tel: +7 (8142) 71-10-01, fax: +7 (8142) 71-10-00
e-mail: rectorat@petrsu.ru, office@petrsu.ru
http://petrsu.ru/
Directorate for innovation
and production activity

31, Lenin Ave., Petrozavodsk
Tel: +7 (8142) 71-32-56
e-mail: oder@petrsu.ru