Heterostructure on basis of oxide films for the use in 3D nonvolatile memory with nanosized scale of components

Problem of modern microelectronics is increase of integration level of microcircuits. Solution of this problem can be found by transition from 2D to 3D integration, which is impossible in framework of standard high temperature silicon-based technology. Creation of 3D microcircuits demands implication of low temperature methods of material deposition and development of totally new effective electronic components on basis of these materials.

In PetrSU scientific base is worked out and working examples of new electronic components are created (memory cells, diodes and transistors), derivable on basis of oxide materials with the use of low process temperatures. It is shown, that these components don’t inferior in efficiency (operation speed, life time, impedance match with existing electronics), for instance, to components, which are used when producing memories, made under flesh technology, however, in contrast to the mentioned, due to low temperatures, admit 3D integration.

Legal potection

• Patent RF for the invention №2392694 «Method for production of photovoltaic element» dated 20.06.2010.
• Patent RF for the invention №2468471 «Method for production of nonvolatile storage element» dated 27.11.2012.
• Patent RF for the invention №2470409 «Method for production of diode on basis of niobium oxide» dated 20.12.2012.